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Proceedings Paper

Ultrafast switching based on field optical bistability in nano-film of semiconductor
Author(s): Vyacheslav A. Trofimov; Vladimir A. Egorenkov; Maria M. Loginova
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Paper Abstract

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

Paper Details

Date Published: 16 September 2016
PDF: 11 pages
Proc. SPIE 9920, Active Photonic Materials VIII, 992029 (16 September 2016); doi: 10.1117/12.2238861
Show Author Affiliations
Vyacheslav A. Trofimov, Lomonosov Moscow State Univ. (Russian Federation)
Vladimir A. Egorenkov, Lomonosov Moscow State Univ. (Russian Federation)
Maria M. Loginova, Lomonosov Moscow State Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 9920:
Active Photonic Materials VIII
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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