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Proceedings Paper

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute
Author(s): Elizabeth Buitrago; Roberto Fallica; Daniel Fan; Waiz Karim; Michaela Vockenhuber; Jeroen A. van Bokhoven; Yasin Ekinci
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Paper Abstract

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

Paper Details

Date Published: 15 September 2016
PDF: 12 pages
Proc. SPIE 9926, UV and Higher Energy Photonics: From Materials to Applications, 99260T (15 September 2016); doi: 10.1117/12.2238805
Show Author Affiliations
Elizabeth Buitrago, Paul Scherrer Institute (Switzerland)
Roberto Fallica, Paul Scherrer Institute (Switzerland)
Daniel Fan, Paul Scherrer Institute (Switzerland)
Waiz Karim, Paul Scherrer Institute (Switzerland)
ETH Zurich (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Jeroen A. van Bokhoven, ETH Zurich (Switzerland)
Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)


Published in SPIE Proceedings Vol. 9926:
UV and Higher Energy Photonics: From Materials to Applications
Gilles Lérondel; Satoshi Kawata; Yong-Hoon Cho, Editor(s)

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