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Proceedings Paper

Spin-orbit assisted chiral-tunneling at semiconductor tunnel junctions: study with advanced 30-band k • p methods
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Paper Abstract

In this paper, we report on theoretical investigations and advanced k • p calculations of carrier forward scattering asymmetry (or transmission asymmetry in tunnel junction) vs. their incidence through magnetic tunnel junctions (MTJ) made of semiconductors involving spin-orbit interactions (SOI). This study represents an extension to our previous contribution1 dealing with the role, on the electronic forward and backward transmission-reflection asymmetry, of the Dresselhaus interaction in the conduction band (CB) of MTJs with antiparallel magnetized electrodes. The role of the atomic-SOI in the p-type valence band (VB) of semiconductors is investigated in a second step. We first developed a perturbative scattering method based on Green’s function formalism and applied to both the orbitally non-degenerated CB and degenerated VB to explain the calculated asymmetry in terms of orbital-moment tunneling branching and chirality arguments. This particular asymmetry features are perfectly reproduced by advanced k • p tunneling approaches (30-band) in rather close agreement with the Green’s function methods at the first perturbation order in the SOI strength parameter. This forward scattering asymmetry leads to skew-tunneling effects involving the branching of evanescent states within the barrier. Recent experiments involving non-linear resistance variations vs. the transverse magnetization direction or current direction in the in-plane current geometry may be invoked by the phenomenon we discuss.

Paper Details

Date Published: 26 September 2016
PDF: 20 pages
Proc. SPIE 9931, Spintronics IX, 993127 (26 September 2016); doi: 10.1117/12.2238796
Show Author Affiliations
Huong T. Dang, Lab. des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, IRAMIS, Univ. Paris Saclay (France)
E. Erina, Lab. des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, IRAMIS, Univ. Paris Saclay (France)
Hoai T. L. Nguyen, Vietnam Academy of Science and Technology (Viet Nam)
H. Jaffrès, CNRS, Thales, Univ. Paris-Sud, Univ. Paris-Saclay (France)
H.-J. Drouhin, Lab. des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, IRAMIS, Univ. Paris Saclay (France)


Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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