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Silicon nanowire photodetectors made by metal-assisted chemical etching
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Paper Abstract

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Paper Details

Date Published: 15 September 2016
PDF: 5 pages
Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 992707 (15 September 2016); doi: 10.1117/12.2238480
Show Author Affiliations
Ying Xu, Univ. of Dayton (United States)
Chuan Ni, Univ. of Dayton (United States)
Andrew Sarangan, Univ. of Dayton (United States)


Published in SPIE Proceedings Vol. 9927:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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