Proceedings Paper
Scanned laser inspection of SOI wafers for HVM| Format | Member Price | Non-Member Price |
|---|---|---|
| $14.40 | $18.00 |
|
GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. | Check Access |
Paper Abstract
In this work we apply a new laser scanning apparatus in multiple ways to measure various aspects of in-process and final silicon-on-insulator (SOI) wafers in high volume manufacturing (HVM). The laser scanner enables high-spatialresolution whole-wafer metrology of topographic features, film thickness variation, and two scattering channels, while bridging between 200 mm and 300 mm diameters on a single platform.
Paper Details
Date Published: 26 September 2016
PDF: 7 pages
Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 99270I (26 September 2016); doi: 10.1117/12.2238461
Published in SPIE Proceedings Vol. 9927:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)
PDF: 7 pages
Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 99270I (26 September 2016); doi: 10.1117/12.2238461
Show Author Affiliations
John F. Valley, SunEdison Semiconductor (United States)
Steven W. Meeks, Zeta Instruments (United States)
Steven W. Meeks, Zeta Instruments (United States)
Yushan Chang, SunEdison Semiconductor (United States)
Vamsi Velidandla, Zeta Instruments (United States)
Vamsi Velidandla, Zeta Instruments (United States)
Published in SPIE Proceedings Vol. 9927:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)
© SPIE. Terms of Use
