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Proceedings Paper

Scanned laser inspection of SOI wafers for HVM
Author(s): John F. Valley; Steven W. Meeks; Yushan Chang; Vamsi Velidandla
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Paper Abstract

In this work we apply a new laser scanning apparatus in multiple ways to measure various aspects of in-process and final silicon-on-insulator (SOI) wafers in high volume manufacturing (HVM). The laser scanner enables high-spatialresolution whole-wafer metrology of topographic features, film thickness variation, and two scattering channels, while bridging between 200 mm and 300 mm diameters on a single platform.

Paper Details

Date Published: 26 September 2016
PDF: 7 pages
Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 99270I (26 September 2016); doi: 10.1117/12.2238461
Show Author Affiliations
John F. Valley, SunEdison Semiconductor (United States)
Steven W. Meeks, Zeta Instruments (United States)
Yushan Chang, SunEdison Semiconductor (United States)
Vamsi Velidandla, Zeta Instruments (United States)

Published in SPIE Proceedings Vol. 9927:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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