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Proceedings Paper

Extended short wavelength infrared HgCdTe detectors on silicon substrates
Author(s): J. H. Park; D. Hansel; A. Mukhortova; Y. Chang; R. Kodama; J. Zhao; S. Velicu; F. Aqariden
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Paper Abstract

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Paper Details

Date Published: 19 September 2016
PDF: 7 pages
Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 99740H (19 September 2016); doi: 10.1117/12.2238053
Show Author Affiliations
J. H. Park, EPIR Technologies, Inc. (United States)
D. Hansel, EPIR Technologies, Inc. (United States)
A. Mukhortova, EPIR Technologies, Inc. (United States)
Y. Chang, EPIR Technologies, Inc. (United States)
R. Kodama, EPIR Technologies, Inc. (United States)
J. Zhao, EPIR Technologies, Inc. (United States)
S. Velicu, EPIR Technologies, Inc. (United States)
F. Aqariden, EPIR Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 9974:
Infrared Sensors, Devices, and Applications VI
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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