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Proceedings Paper

Terahertz plasmon amplification in RTD-gated HEMTs with a grating-gate
Author(s): Hugo O. Condori Quispe; Jimy Encomendero; Huili Grace Xing; Berardi Sensale Rodriguez
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Paper Abstract

We analyze amplification of terahertz plasmons in a grating-gate semiconductor hetero-structure. The device consists of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT), i.e. a HEMT structure with a double-barrier gate stack enabling resonant tunneling from gate to channel. In these devices, the key element enabling substantial power gain is the coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e. the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as in previous works, enabling amplification with associated power gain >> 30 dB at room temperature.

Paper Details

Date Published: 16 September 2016
PDF: 4 pages
Proc. SPIE 9920, Active Photonic Materials VIII, 992027 (16 September 2016); doi: 10.1117/12.2238038
Show Author Affiliations
Hugo O. Condori Quispe, The Univ. of Utah (United States)
Jimy Encomendero, Cornell Univ. (United States)
Huili Grace Xing, Cornell Univ. (United States)
Berardi Sensale Rodriguez, The Univ. of Utah (United States)


Published in SPIE Proceedings Vol. 9920:
Active Photonic Materials VIII
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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