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Proceedings Paper

Perspectives of DIG FinFETs for efficient terahertz detection applications
Author(s): Mehdi Hasan; Pierre-Emmanuel Gaillardon; Berardi Sensale Rodriguez
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Paper Abstract

Dual-independent-gate (DIG) silicon FinFETs were recently shown capable of operating with ultra-steep subthreshold slope of 3.4 mV/dec at room-temperature due to a weak impact ionization induced positive feedback. In this work we discuss the perspectives of these devices for room-temperature terahertz detector applications. Our analysis shows that DIG-FinFETs can enable room-temperature current-responsivities up to two orders of magnitude larger than those of regular FET and Schottky diode detectors at room-temperature. The device operation, detector configurations, and the sources of noise in the device are discussed and rigorously analyzed; moreover the device is also benchmarked against other present-day direct detector technologies.

Paper Details

Date Published: 26 September 2016
PDF: 6 pages
Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 99340H (26 September 2016); doi: 10.1117/12.2238033
Show Author Affiliations
Mehdi Hasan, The Univ. of Utah (United States)
Pierre-Emmanuel Gaillardon, The Univ. of Utah (United States)
Berardi Sensale Rodriguez, The Univ. of Utah (United States)

Published in SPIE Proceedings Vol. 9934:
Terahertz Emitters, Receivers, and Applications VII
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada; Dimitris Pavlidis, Editor(s)

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