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Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures
Author(s): Sara Arezoomandan; Hugo O. Condori Quispe; Ashish Chanana; Peng Xu; Ajay Nahata; Bharat Jalan; Berardi Sensale-Rodriguez
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Paper Abstract

We analyze the terahertz properties of complex oxide hetero-structures with record-high carrier concentration approaching 1015 cm-2. Our results evidence a large room temperature terahertz conductivity, which corresponds to 3X to 6X larger mobility than what is extracted from electrical measurements. That is, in spite of a relatively lower mobility, when taking into account its ultra-large carrier concentration, the 2DEG in complex oxide hetero-structures can still attain a large terahertz conductivity, which is comparable with that in traditional high-mobility semiconductors or large-area CVVD graphene films. Moreover, we also discuss the perspectives off these hetero-structures for terahertz and high frequency electronic applications.

Paper Details

Date Published: 26 September 2016
PDF: 5 pages
Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 99340N (26 September 2016); doi: 10.1117/12.2238026
Show Author Affiliations
Sara Arezoomandan, The Univ. of Utah (United States)
Hugo O. Condori Quispe, The Univ. of Utah (United States)
Ashish Chanana, The Univ. of Utah (United States)
Peng Xu, Univ. of Minnesota, Twin Cities (United States)
Ajay Nahata, The Univ. of Utah (United States)
Bharat Jalan, Univ. of Minnesota, Twin Cities (United States)
Berardi Sensale-Rodriguez, The Univ. of Utah (United States)


Published in SPIE Proceedings Vol. 9934:
Terahertz Emitters, Receivers, and Applications VII
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada; Dimitris Pavlidis, Editor(s)

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