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Spin injection, spin detection, and resonant spin transmission through single and double ferromagnetic/nonmagnetic Esaki barriers
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Paper Abstract

We study the contact resistance of strongly doped ferromagnetic/non-magnetic semiconductors structure (p+ - F/n+ -N), working as spin injectors and spin extractors. Because of the strong effect that the barrier shape has on the tunneling probabilities, we evaluate, as accurately as possible, the quantum-mechanical spin-dependent transmission across the Esaki barrier built up at the p-n interface. To simplify the discussion and calculation of transmission coefficients through the Esaki barrier, we concentrate here on the structure p+ - F/n+ -N, without a stop layer I. We evaluate the spin injection and spin extraction transmission coefficients T↑↑ and T↓↓, and the spin transmission polarization as functions of bias potential, exchange interaction energy and Fermi energy level for specific realizations of the structure p+-Ga1-xMnxAs/n+-GaAs.

Paper Details

Date Published: 26 September 2016
PDF: 20 pages
Proc. SPIE 9931, Spintronics IX, 993124 (26 September 2016); doi: 10.1117/12.2237995
Show Author Affiliations
Pedro Pereyra, Univ. of Regensburg (Germany)
Univ. Autónoma Metropolitana (Mexico)
Dieter Weiss, Univ. of Regensburg (Germany)

Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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