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Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)
Author(s): Xiaojun Xie; Anand Ramaswamy; Yang Shen; Zhanyu Yang; Matt Jacob-Mitos; Ye Wang; Jizhao Zang; Erik Norberg; Greg Fish; Joe C. Campbell; Andreas Beling
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Paper Abstract

We report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-Μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm2, 14♦50 μm2, 14×100 μm2 and 14×150 μm2 are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm2 photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.

Paper Details

Date Published: 20 September 2016
PDF: 6 pages
Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 997406 (20 September 2016); doi: 10.1117/12.2237851
Show Author Affiliations
Xiaojun Xie, Univ. of Virginia (United States)
Anand Ramaswamy, Aurrion Inc. (United States)
Yang Shen, Univ. of Virginia (United States)
Zhanyu Yang, Univ. of Virginia (United States)
Matt Jacob-Mitos, Aurrion Inc. (United States)
Ye Wang, Univ. of Virginia (United States)
Jizhao Zang, Univ. of Virginia (United States)
Erik Norberg, Aurrion Inc. (United States)
Greg Fish, Aurrion Inc. (United States)
Joe C. Campbell, Univ. of Virginia (United States)
Andreas Beling, Univ. of Virginia (United States)


Published in SPIE Proceedings Vol. 9974:
Infrared Sensors, Devices, and Applications VI
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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