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TERS at work: 2D materials, from graphene to 2D semiconductors
Author(s): Andrey Krayev; Sergey Bashkirov; Vasily Gavrilyuk; Vladimir Zhizhimontov; Marc Chaigneau; Maruda Shanmugasundaram; A. Edward Robinson
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Paper Abstract

We report results of TERS characterization of graphene oxide and the 2D semiconductors, MoS2 and WS2. The gap mode TERS signal of these 2D materials becomes dramatically enhanced over wrinkles and creases, as well as over nanopatterns imprinted into flakes using a sharp diamond probe. The resonant Raman signal of MoS2 contains additional peaks normally forbidden by selection rules. TERS maps of few-layer-flakes of this 2D semiconductor show that the spatial distribution of Raman intensity across the flake varies for different peaks, providing interesting insights into the structure of such 2D semiconductors with 10-20 nm spatial resolution.

Paper Details

Date Published: 15 September 2016
PDF: 9 pages
Proc. SPIE 9925, Nanoimaging and Nanospectroscopy IV, 99250A (15 September 2016); doi: 10.1117/12.2237678
Show Author Affiliations
Andrey Krayev, AIST-NT Inc. (United States)
Sergey Bashkirov, AIST-NT Inc. (United States)
Vasily Gavrilyuk, AIST-NT Inc. (United States)
Vladimir Zhizhimontov, AIST-NT Inc. (United States)
Marc Chaigneau, Horiba Scientific (France)
Maruda Shanmugasundaram, Horiba Scientific (United States)
A. Edward Robinson, AIST-NT Inc. (United States)


Published in SPIE Proceedings Vol. 9925:
Nanoimaging and Nanospectroscopy IV
Prabhat Verma; Alexander Egner, Editor(s)

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