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Proceedings Paper

Controlling the growth temperature gradient and interface shape for traveling heater method growth of CdTe single crystals
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Paper Abstract

The temperature gradient at the growth interface is as important as the growth temperature and the growth rate for growing CdTe single crystals by the Traveling Heater Method (THM). This article presents the results of an experimental study of the influence of the growth temperature gradient on THM growth of CdTe single crystals. CdTe crystals were grown at about 900°C with the growth rate of 10 mm/day and the rotation rate of 3 rpm. With the growth temperature gradient of about 30 °C/cm even a single-grain structure became a multi-grain structure in the final stage of growth. On the other hand, with the growth temperature gradient of about 50 °C/cm, even if the crystal started with multi-grains, it became a single crystal eventually. The constitutional supercooling criterion was used to interpret these results.

Paper Details

Date Published: 9 September 2016
PDF: 7 pages
Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 996817 (9 September 2016); doi: 10.1117/12.2237457
Show Author Affiliations
Youngjoon Suh, Korea Institute of Science and Technology (Korea, Republic of)
Jin-Sang Kim, Korea Institute of Science and Technology (Korea, Republic of)
Sang-Hee Suh, Korea Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 9968:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII
Ralph B. James; Michael Fiederle; Arnold Burger; Larry Franks, Editor(s)

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Controlling the growth temperature gradient and interface shape for traveling heater method growth of CdTe single crystals



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