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Tailored absorption/emission from epsilon-near-zero materials (Conference Presentation)
Author(s): Ting Luk
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Paper Abstract

Controlled absorption/emission is important for many optical devices such as photovoltaic and thermal photovoltaic. In this paper we show experimental and theoretical results of deeply subwavelength epsilon-near-zero materials using degenerately doped semiconductors, such as indium tin oxide, can be used to spectrally tailor perfect absorption/emission in the near-ir region. At mid-infrared frequencies, a superlattice of doped and undoped quantum wells can be used to create epsilon-near-zero medium for directional and spectrally tailored emission.

Paper Details

Date Published: 9 November 2016
PDF: 1 pages
Proc. SPIE 9920, Active Photonic Materials VIII, 992006 (9 November 2016); doi: 10.1117/12.2237316
Show Author Affiliations
Ting Luk, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 9920:
Active Photonic Materials VIII
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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Tailored absorption/emission from epsilon-near-zero materials (Conference Presentation)



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