Share Email Print
cover

Proceedings Paper • new

Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping
Author(s): A. Montanaro; S. Mzali; J.-P. Mazellier; S. Molin; C. Larat; O. Bezencenet; P. Legagneux
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.

Paper Details

Date Published: 26 September 2016
PDF: 5 pages
Proc. SPIE 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, 99320Q (26 September 2016); doi: 10.1117/12.2237289
Show Author Affiliations
A. Montanaro, Thales Research and Technology (France)
S. Mzali, Thales Research and Technology (France)
J.-P. Mazellier, Thales Research and Technology (France)
S. Molin, Thales Research and Technology (France)
C. Larat, Thales Research and Technology (France)
O. Bezencenet, Thales Research and Technology (France)
P. Legagneux, Thales Research and Technology (France)


Published in SPIE Proceedings Vol. 9932:
Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX
Manijeh Razeghi; Maziar Ghazinejad; Can Bayram; Jae Su Yu, Editor(s)

Video Presentation

Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping



© SPIE. Terms of Use
Back to Top