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Novel compact model for multi-level spin torque magnetic tunnel junctions
Author(s): Sanjay Prajapati; Shivam Verma; Anant Aravind Kulkarni; Brajesh Kumar Kaushik
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Paper Abstract

Spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic tunnel junction (MTJ) devices are emerging as strong contenders for the next generation memories. Conventional STT magneto-resistive random access memory (MRAM) offers lower power, non-volatility and CMOS process compatibility. However, higher current requirement during the write operation leads to tunnel barrier reliability issues and larger access devices. SOT-MRAM eliminates the reliability issues with strong spin polarized current (100%) and separate read/write current paths; however, the additional two access transistors in SOT-MRAM results into increased cell area. Multilevel cell (MLC) structure paves a way to circumvent the problems related to the conventional STT/SOT based MTJ devices and provides enhanced integration density at reduced cost per bit. Conventional STT/SOT-MRAM requires a unit cell area of ~10-60 F2 and reported simulations have been based on available single-level MTJ compact models. However, till date no compact model exists that can capture the device physics of MLC-MTJ accurately. Hence, a novel compact model is proposed in this paper to capture the accurate device physics and behaviour of the MLC-MTJs. It is designed for MLCs with different MTJ configurations demonstrated so far, such as series and parallel free layer based MLC-MTJs. The proposed model is coded in Verilog-A, which is compatible with SPICE for circuit level simulations. The model is in close agreement with the experimental results exhibiting an average error of less than 15%.

Paper Details

Date Published: 26 September 2016
PDF: 9 pages
Proc. SPIE 9931, Spintronics IX, 99310I (26 September 2016); doi: 10.1117/12.2237239
Show Author Affiliations
Sanjay Prajapati, Indian Institute of Technology Roorkee (India)
Shivam Verma, Indian Institute of Technology Roorkee (India)
Anant Aravind Kulkarni, Indian Institute of Technology Roorkee (India)
Brajesh Kumar Kaushik, Indian Institute of Technology Roorkee (India)


Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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