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Proceedings Paper

Optical and electrical properties of transition metal nitride films produced by reactive cathodic arc deposition and reactive rf sputtering
Author(s): Paul Kraatz; F. Russell Nakatsukasa; John W. Stephenson
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Paper Abstract

Thin films of titanium, zirconium, and hafnium nitride have been fabricated by reactive cathodic arc deposition from elemental targets in a nitrogen ambient. The optical constants n and k of these films have been measured ellipsometrically from 0.40 to 0.70 m. Refiectances have been measured from 0.40 to 16 jim. Electrical properties have been evaluated using sheet resistance and Hall mobility measurements. Values for cathodic arc TiN films are compared with data for TiN films fabricated by reactive RF bias sputtering from a titanium target in an argon/nitrogen medium. Measured film properties are correlated with deposition parameters and qualitative studies of microstructure and surface topography.

Paper Details

Date Published: 1 December 1990
PDF: 12 pages
Proc. SPIE 1323, Optical Thin Films III: New Developments, (1 December 1990); doi: 10.1117/12.22372
Show Author Affiliations
Paul Kraatz, Northrop Research and Technolo (United States)
F. Russell Nakatsukasa, Northrop Research and Technolo (United States)
John W. Stephenson, Northrop Research and Technolo (United States)

Published in SPIE Proceedings Vol. 1323:
Optical Thin Films III: New Developments
Richard Ian Seddon, Editor(s)

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