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Proceedings Paper

Molecular doping of single-walled carbon nanotube transistors: optoelectronic study
Author(s): Jiangbin Zhang; Aleksei V. Emelianov; Artem A. Bakulin; Ivan I. Bobrinetskiy
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Paper Abstract

Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest ~4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.

Paper Details

Date Published: 26 September 2016
PDF: 7 pages
Proc. SPIE 9923, Physical Chemistry of Interfaces and Nanomaterials XV, 992319 (26 September 2016); doi: 10.1117/12.2236987
Show Author Affiliations
Jiangbin Zhang, Univ. of Cambridge (United Kingdom)
Aleksei V. Emelianov, National Research Univ. of Electronic Technology (Russian Federation)
Artem A. Bakulin, Univ. of Cambridge (United Kingdom)
Imperial College London (United Kingdom)
Ivan I. Bobrinetskiy, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 9923:
Physical Chemistry of Interfaces and Nanomaterials XV
Artem A. Bakulin; Robert Lovrincic; Natalie Banerji, Editor(s)

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