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Quantifying charge trapping and molecular doping in organic p-i-n diodes
Author(s): Changmin Keum; Shiyi Liu; Akram Al-Shadeedi; Vikash Kaphle; Björn Lüssem
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Paper Abstract

Organic p-i-n diodes enable the development of highly efficient organic devices such as organic light-emitting diodes. Understanding charge carrier trapping in these diodes is essential to comprehensively describe their electrical behaviors and increase their efficiency further. Here, a new bias stress protocol is developed to study charge trapping and the influence of trapping on molecular doping in organic p-i-n diodes. The results are discussed with the help of a novel analytical model, which is capable of quantifying the density of trapped charges and the doping efficiency from capacitance spectroscopy. We propose that this combined experimental/modeling approach is versatile and can lead to an advanced understanding of trapping in organic electronic devices.

Paper Details

Date Published: 23 September 2016
PDF: 7 pages
Proc. SPIE 9941, Organic Light Emitting Materials and Devices XX, 994122 (23 September 2016); doi: 10.1117/12.2236985
Show Author Affiliations
Changmin Keum, Kent State Univ. (United States)
Shiyi Liu, Kent State Univ. (United States)
Akram Al-Shadeedi, Kent State Univ. (United States)
Vikash Kaphle, Kent State Univ. (United States)
Björn Lüssem, Kent State Univ. (United States)

Published in SPIE Proceedings Vol. 9941:
Organic Light Emitting Materials and Devices XX
Franky So; Chihaya Adachi; Jang-Joo Kim, Editor(s)

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