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Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films
Author(s): Edwin Jose; M. C. Santhosh Kumar
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Paper Abstract

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Paper Details

Date Published: 26 September 2016
PDF: 7 pages
Proc. SPIE 9929, Nanostructured Thin Films IX, 992917 (26 September 2016); doi: 10.1117/12.2236883
Show Author Affiliations
Edwin Jose, National Institute of Technology Tiruchirappalli (India)
M. C. Santhosh Kumar, National Institute of Technology Tiruchirappalli (India)


Published in SPIE Proceedings Vol. 9929:
Nanostructured Thin Films IX
Akhlesh Lakhtakia; Tom G. Mackay; Motofumi Suzuki, Editor(s)

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