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Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor
Author(s): K. Roodenko; K. K. Choi; K. P. Clark; E. D. Fraser; K. W. Vargason; J.-M. Kuo; Y.-C. Kao; P. R. Pinsukanjana
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Paper Abstract

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

Paper Details

Date Published: 19 September 2016
PDF: 6 pages
Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 997404 (19 September 2016); doi: 10.1117/12.2236881
Show Author Affiliations
K. Roodenko, Intelligent Epitaxy Technology, Inc. (United States)
K. K. Choi, U.S. Army Research Lab. (United States)
K. P. Clark, Intelligent Epitaxy Technology, Inc. (United States)
E. D. Fraser, Intelligent Epitaxy Technology, Inc. (United States)
K. W. Vargason, Intelligent Epitaxy Technology, Inc. (United States)
J.-M. Kuo, Intelligent Epitaxy Technology, Inc. (United States)
Y.-C. Kao, Intelligent Epitaxy Technology, Inc. (United States)
P. R. Pinsukanjana, Intelligent Epitaxy Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 9974:
Infrared Sensors, Devices, and Applications VI
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor



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