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Proceedings Paper

Towards highly stable polymer electronics (Conference Presentation)
Author(s): Mark Nikolka; Iyad Nasrallah; Katharina Broch; Aditya Sadhanala; Michael Hurhangee; Iain McCulloch; Henning Sirringhaus
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Paper Abstract

Due to their ease of processing, organic semiconductors are promising candidates for applications in high performance flexible displays and fast organic electronic circuitry. Recently, a lot of advances have been made on organic semiconductors exhibiting surprisingly high performance and carrier mobilities exceeding those of amorphous silicon. However, there remain significant concerns about their operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode (OLED) displays. Here, we report a novel technique for dramatically improving the operational stress stability, performance and uniformity of high mobility polymer field-effect transistors by the addition of specific small molecule additives to the polymer semiconductor film. We demonstrate for the first time polymer FETs that exhibit stable threshold voltages with threshold voltage shifts of less than 1V when subjected to a constant current operational stress for 1 day under conditions that are representative for applications in OLED active matrix displays. The approach constitutes in our view a technological breakthrough; it also makes the device characteristics independent of the atmosphere in which it is operated, causes a significant reduction in contact resistance and significantly improves device uniformity. We will discuss in detail the microscopic mechanism by which the molecular additives lead to this significant improvement in device performance and stability.

Paper Details

Date Published:
PDF: 1 pages
Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430J; doi: 10.1117/12.2236467
Show Author Affiliations
Mark Nikolka, Univ. of Cambridge (United Kingdom)
Iyad Nasrallah, Univ. of Cambridge (United Kingdom)
Katharina Broch, Univ. of Cambridge (United Kingdom)
Aditya Sadhanala, Univ. of Cambridge (United Kingdom)
Michael Hurhangee, Imperial College London (United Kingdom)
Iain McCulloch, Imperial College London (United Kingdom)
Henning Sirringhaus, Univ. of Cambridge (United Kingdom)


Published in SPIE Proceedings Vol. 9943:
Organic Field-Effect Transistors XV
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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