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Proceedings Paper

Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories (Conference Presentation)
Author(s): Hung-Chin Wu; Chih-Chien Hung; Yu-Cheng Chiu; Shih-Huang Tung; Wen-Chang Chen
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Paper Abstract

High Performance organic field-effect transistor (OFET) memory devices were successfully prepared using new dielectric materials, poly(N-(hydroxymethyl)acrylamide-co-5 -(9-(5-(diethylamino)pentyl)-2-(4-vinylphenyl)-9H-fluorene (P(NMA-co-F6NSt)), which contained chemical cross-linkable segment (NMA) and hole trapping building block (F6NSt). The high k characteristics of P(NMA-co-F6NSt)) led to a low voltage operation, a small power consumption, and a good digital information storage capacity. Such P(NMA-co-F6NSt) dielectrics in OFET memories with variant NMA/F6NSt molar ratios (100/0 (P1), 95/5 (P2), 80/20 (P3), and 67/33 (P4)) showed excellent insulating properties and good charge storage performance under a low operating voltage below ±5V, due to the tightly network structures after crosslinking and well-dispersed trapping cites (i.e. fluorene moieties). P3-based memory device, in particular, exhibited largest memory window of 4.13 V among the studied polymers, and possessed stable data retention stability over 104 s with a high on/off current ratio (i.e. 104) and good endurance characteristics of more than 200 write-read-write-erase (WRER) cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel synthesized high-k copolymers.

Paper Details

Date Published: 7 November 2016
PDF: 1 pages
Proc. SPIE 9945, Printed Memory and Circuits II, 994509 (7 November 2016); doi: 10.1117/12.2236458
Show Author Affiliations
Hung-Chin Wu, National Taiwan Univ. (Taiwan)
Chih-Chien Hung, National Taiwan Univ. (Taiwan)
Yu-Cheng Chiu, National Taiwan Univ. (Taiwan)
Shih-Huang Tung, National Taiwan Univ. (Taiwan)
Wen-Chang Chen, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 9945:
Printed Memory and Circuits II
Emil J. W. List-Kratochvil, Editor(s)

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