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Proceedings Paper

Improving performance, stability, and processability of OFETs with printed Ag electrodes by means of a novel, multipurpose self-assembled monolayer (Conference Presentation)
Author(s): Milan Alt; Malte Jesper; Janusz Schinke; Sabina Hillebrandt; Patrick Reiser; Tobias Rödlmeier; Iva Angelova; Manuel Hamburger; Ulrich Lemmer; Gerardo Hernandez-Sosa; Robert Lovrincic
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Paper Abstract

We present a novel SAM-forming molecule bisjulolidyldisulfide that reduces the WF of metal surfaces by ~1.2 eV and can lower the barrier for electron injection to organic semiconductors. Applied to Au and Ag surfaces, including inkjet-printed Ag on PET, we characterized bisjulolidyldisulfide monolayers by means of photoelectron spectroscopy (PES) and sessile drop technique, as well as their influence on the performance of n-type OFETs. Next a strong reduction of the contact resistance by two orders of magnitude, we found that this SAM treatment extends the shelf lifetime of ambient-stored OFET devices. Also, it improves the wettability and thereby facilitates solution processing of a subsequent layer with respect to the untreated surface. The full electrical functionality of bisjulolidyldisulfide SAMs was found to become manifest with only one minute of immersion in ethanol solution. PES measurements suggests that the surface coverage is thorough on Au, but only fractional on Ag, especially on printed Ag. However, the quality of SAM-treated bottom contacts in n-type OFETs is very similar for all three investigated metal surfaces (Au and Ag evaporated and printed Ag). This is especially important for printed Ag-electrodes, as their surface was found to be significantly worse for device performance in comparison to their evaporated Ag counterpart. Using this surface treatment we realized integrated unipolar n-type ring oscillators with inkjet printed Ag electrodes.

Paper Details

Date Published: 2 November 2016
PDF: 1 pages
Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430W (2 November 2016); doi: 10.1117/12.2235907
Show Author Affiliations
Milan Alt, Karlsruher Institut für Technologie (Germany)
Malte Jesper, Ruprecht-Karls-Univ. Heidelberg (Germany)
InnovationLab GmbH (Germany)
Janusz Schinke, InnovationLab GmbH (Germany)
Sabina Hillebrandt, Ruprecht-Karls-Univ. Heidelberg (Germany)
InnovationLab GmbH (Germany)
Patrick Reiser, Technische Univ. Darmstadt (Germany)
InnovationLab GmbH (Germany)
Tobias Rödlmeier, Karlsruher Institut für Technologie (Germany)
InnovationLab GmbH (Germany)
Iva Angelova, BASF SE (Germany)
InnovationLab GmbH (Germany)
Manuel Hamburger, Merck KGaA (Germany)
InnovationLab GmbH (Germany)
Ulrich Lemmer, Karlsruher Institut für Technologie (Germany)
InnovationLab GmbH (Germany)
Gerardo Hernandez-Sosa, Karlsruher Institut für Technologie (Germany)
InnovationLab GmbH (Germany)
Robert Lovrincic, Technische Univ. Braunschweig (Germany)
InnovationLab GmbH (Germany)

Published in SPIE Proceedings Vol. 9943:
Organic Field-Effect Transistors XV
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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