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Proceedings Paper

Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications
Author(s): JeongYub Lee; Byonggwon Song; Jaekwan Kim; Chang-Won Lee; Seunghoon Han; Chan-Wook Baik; Heejeong Jeong; Yongsung Kim; Chang Seung Lee
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Paper Abstract

We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with ±5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors.

Paper Details

Date Published: 15 September 2016
PDF: 11 pages
Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 992708 (15 September 2016); doi: 10.1117/12.2235523
Show Author Affiliations
JeongYub Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)
Byonggwon Song, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jaekwan Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chang-Won Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)
Seunghoon Han, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chan-Wook Baik, Samsung Electronics Co., Ltd. (Korea, Republic of)
Heejeong Jeong, Samsung Electronics Co., Ltd. (Korea, Republic of)
Yongsung Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chang Seung Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9927:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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