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Proceedings Paper

Ultrashort pulse laser slicing of semiconductor crystal
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Paper Abstract

Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without the reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by femtosecond laser induced slicing method. By using this, the exfoliated surface with the root-mean-square roughness of 3 μm and the cutting-loss thickness smaller than 30 μm was successfully demonstrated. We have also observed the nanostructure on the exfoliated surface in SiC crystal.

Paper Details

Date Published: 22 July 2016
PDF: 6 pages
Proc. SPIE 9983, Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers, 99831B (22 July 2016); doi: 10.1117/12.2235146
Show Author Affiliations
Eunho Kim, Kyoto Univ. (Japan)
Yasuhiko Shimotsuma, Kyoto Univ. (Japan)
Masaaki Sakakura, Kyoto Univ. (Japan)
Kiyotaka Miura, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 9983:
Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers
Takahisa Jitsuno; Jianda Shao; Wolfgang Rudolph, Editor(s)

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