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Proceedings Paper

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications
Author(s): K. Roodenko; P.-K. Liao; D. Lan; K. P. Clark; E. D. Fraser; K. W. Vargason; J.-M. Kuo; Y.-C. Kao; P. R. Pinsukanjana
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Paper Abstract

Epi-ready GaSb wafers with low absorption coefficients are of a special interest as substrates for molecular beam epitaxy (MBE) growth of material for IR focal plane arrays that operate under back-side illumination configuration, when the substrate is not completely removed. While low absorption coefficient across a broad IR spectral range (~2um-20um) is achievable in GaSb crystals with low Te doping, the control of the doping distribution across the wafers is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb wafers. In this work, we examine data from the n-type and p-type Te-doped GaSb samples with doping concentration below 1e18 cm-3. The carrier concentration measured by the Hall and the transmission data measured by FTIR spectroscopy are correlated. We perform a rigorous analysis of the absorption coefficient based on the free-carrier absorption mechanism that is dominant for the n-type GaSb and the inter-valence band absorption due to the transitions from the light-hole to the heavy-hole band that is the dominant absorption mechanism for the p-type GaSb. Based on the correlation between the Hall and the FTIR data, carrier concentration profile can be estimated from the non-destructive FTIR transmission mapping of the wafer.

Paper Details

Date Published: 26 May 2016
PDF: 6 pages
Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 985415 (26 May 2016); doi: 10.1117/12.2234694
Show Author Affiliations
K. Roodenko, Intelligent Epitaxy Technology, Inc. (United States)
P.-K. Liao, Intelligent Epitaxy Technology, Inc. (United States)
D. Lan, Intelligent Epitaxy Technology, Inc. (United States)
K. P. Clark, Intelligent Epitaxy Technology, Inc. (United States)
E. D. Fraser, Intelligent Epitaxy Technology, Inc. (United States)
K. W. Vargason, Intelligent Epitaxy Technology, Inc. (United States)
J.-M. Kuo, Intelligent Epitaxy Technology, Inc. (United States)
Y.-C. Kao, Intelligent Epitaxy Technology, Inc. (United States)
P. R. Pinsukanjana, Intelligent Epitaxy Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 9854:
Image Sensing Technologies: Materials, Devices, Systems, and Applications III
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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