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Proceedings Paper

Simplified charge transfer inefficiency correction in CCDs by trap-pumping
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Paper Abstract

A major concern when using Charge-Coupled Devices in hostile radiation environments is radiation induced Charge Transfer Inefficiency. The displacement damage from non-ionising radiation incident on the detector creates defects within the silicon lattice, these defects can capture and hold charge for a period of time dependent on the operating temperature and the type of defect, or “trap species”. The location and type of defect can be determined to a high degree of precision using the trap-pumping technique, whereby background charges are input and then shuffled forwards and backwards between pixels many times and repeated using different transfer timings to promote resonant charge-pumping at particular defect sites. Where the charge transfer timings used in the trap-pumping process are equivalent to the nominal CCD readout modes, a simple “trap-map” of the defects that will most likely contribute to charge transfer inefficiency in the CCD array can be quickly generated. This paper describes a concept for how such a “trap-map” can be used to correct images subject to non-ionising radiation damage and provides initial results from an analytical algorithm and our recommendations for future developments.

Paper Details

Date Published: 5 August 2016
PDF: 9 pages
Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99152A (5 August 2016); doi: 10.1117/12.2232706
Show Author Affiliations
Jason P. D. Gow, The Open Univ. (United Kingdom)
Neil J. Murray, The Open Univ. (United Kingdom)
Dynamic Imaging Analytics Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 9915:
High Energy, Optical, and Infrared Detectors for Astronomy VII
Andrew D. Holland; James Beletic, Editor(s)

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