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Proceedings Paper

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD
Author(s): D. Wood; D. Hall; J. P. D. Gow; A. Holland
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Paper Abstract

Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

Paper Details

Date Published: 16 August 2016
PDF: 9 pages
Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150J (16 August 2016); doi: 10.1117/12.2231682
Show Author Affiliations
D. Wood, The Open Univ. (United Kingdom)
D. Hall, The Open Univ. (United Kingdom)
J. P. D. Gow, The Open Univ. (United Kingdom)
A. Holland, The Open Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 9915:
High Energy, Optical, and Infrared Detectors for Astronomy VII
Andrew D. Holland; James Beletic, Editor(s)

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