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Proceedings Paper

Development of graphene based detectors for EO/ IR applications
Author(s): Ashok K. Sood; Isaac Lund; John W. Zeller; Yash R. Puri; Harry Efstathiadis; Pradeep Haldar; Nibir K. Dhar; Jay Lewis; Priyalal Wijewarnasuriya
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Paper Abstract

Graphene has amazing abilities due to its unique band structure characteristics defining its enhanced electrical capabilities for a material with the highest characteristic mobility known to exist at room temperature. The high mobility of graphene occurs due to electron delocalization and weak electron phonon interaction making graphene an ideal material for electrical applications requiring high mobility and fast response times. In this paper, we are going to focus on the benefits along with some of the limitations with using graphene in infrared (IR) devices, electro-optic (EO) devices, and field effect transistors (FET) for radio frequency (RF) applications.

Paper Details

Date Published: 26 May 2016
PDF: 18 pages
Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 98540D (26 May 2016); doi: 10.1117/12.2229649
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Isaac Lund, Magnolia Optical Technologies, Inc. (United States)
John W. Zeller, Magnolia Optical Technologies, Inc. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Harry Efstathiadis, College of Nanoscale Science and Engineering (United States)
Pradeep Haldar, College of Nanoscale Science and Engineering (United States)
Nibir K. Dhar, Night Vision and Electronics Sensors Directorate (United States)
Jay Lewis, DARPA/MTO (United States)
Priyalal Wijewarnasuriya, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 9854:
Image Sensing Technologies: Materials, Devices, Systems, and Applications III
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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