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Proceedings Paper

High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks
Author(s): Xuejun Xu; Hideaki Hashimoto; Keisuke Yoshida; Kentarou Sawano; Takuya Maruizumi
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Paper Abstract

Micro-disk resonators with high Q-factor have been experimentally demonstrated on germanium-on-insulator (GOI). GOI substrates fabricated by direct wafer bonding show better crystal quality that germanium films directly grown on Si. Sharp resonant peaks with Q-factor around 1000–4000 have been observed from micro-disks fabricated on GOI substrate by low-temperature photoluminescence measurements. The light emission properties against pump laser power and device temperature are also investigated. Our results indicating that GOI micro-disks are promising resonators for low threshold, ultra-compact Ge lasers on Si.

Paper Details

Date Published: 13 May 2016
PDF: 6 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910V (13 May 2016); doi: 10.1117/12.2229555
Show Author Affiliations
Xuejun Xu, Tokyo City Univ. (Japan)
Hideaki Hashimoto, Tokyo City Univ. (Japan)
Keisuke Yoshida, Tokyo City Univ. (Japan)
Kentarou Sawano, Tokyo City Univ. (Japan)
Takuya Maruizumi, Tokyo City Univ. (Japan)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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