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Proceedings Paper

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications
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Paper Abstract

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ∼1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Paper Details

Date Published: 17 May 2016
PDF: 13 pages
Proc. SPIE 9865, Energy Harvesting and Storage: Materials, Devices, and Applications VII, 986503 (17 May 2016); doi: 10.1117/12.2229487
Show Author Affiliations
Priyalal S. Wijewarnasuriya, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 9865:
Energy Harvesting and Storage: Materials, Devices, and Applications VII
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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