Share Email Print
cover

Proceedings Paper

Pressure transducer of the on the basis of reactive properties of transistor structure with negative resistance
Author(s): Alexander V. Osadchuk; Iaroslav A. Osadchuk; Andrzej Smolarz; Nazym Kussambayeva
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector pressure sensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental research have shown, that sensitivity of the transducer makes 1,55–1,10kHz/kPa.

Paper Details

Date Published: 17 December 2015
PDF: 6 pages
Proc. SPIE 9816, Optical Fibers and Their Applications 2015, 98161C (17 December 2015); doi: 10.1117/12.2229211
Show Author Affiliations
Alexander V. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Iaroslav A. Osadchuk, Vinnitsa National Technical Univ. (Ukraine)
Andrzej Smolarz, Lublin Univ. of Technology (Poland)
Nazym Kussambayeva, Kazakh Academy of Transport and Communications of the M.Tynyshpayev (Kazakhstan)


Published in SPIE Proceedings Vol. 9816:
Optical Fibers and Their Applications 2015
Ryszard S. Romaniuk; Waldemar Wojcik; Andrzej Smolarz, Editor(s)

© SPIE. Terms of Use
Back to Top