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Proceedings Paper

Line edge roughness frequency analysis for SAQP process
Author(s): Lei Sun; Xiaoxiao Zhang; Shimon Levi; Adam Ge; Hua Zhou; Wenhui Wang; Navaneetha Krishnan; Yulu Chen; Erik Verduijn; Ryoung-han Kim
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Paper Abstract

The line edge roughness (LER) and line width roughness (LWR) transfer in a self-aligned quadruple patterning (SAQP) process is shown for the first time. Three LER characterization methods, including conventional standard deviation method, power spectral density (PSD) method and frequency domain 3-sigma method, are used in the analysis. The wiggling is also quantitatively characterized for each SAQP step with a wiggling factor. This work will benefit both process optimization and process monitoring.

Paper Details

Date Published: 15 March 2016
PDF: 6 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 97801S (15 March 2016); doi: 10.1117/12.2229176
Show Author Affiliations
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Xiaoxiao Zhang, GLOBALFOUNDRIES Inc. (United States)
Shimon Levi, Applied Materials, Ltd. (Israel)
Adam Ge, Applied Materials, Inc. (United States)
Hua Zhou, Applied Materials, Inc. (United States)
Wenhui Wang, GLOBALFOUNDRIES Inc. (United States)
Navaneetha Krishnan, Applied Materials, Inc. (United States)
Yulu Chen, GLOBALFOUNDRIES Inc. (United States)
Erik Verduijn, GLOBALFOUNDRIES Inc. (United States)
Ryoung-han Kim, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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