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Proceedings Paper

High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
Author(s): M. Razeghi; A. Haddadi; X. V. Suo; S. Adhikary; P. Dianat; R. Chevallier; A. M. Hoang; A. Dehzangi
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Paper Abstract

We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ~1.8mm. For −50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.

Paper Details

Date Published: 20 May 2016
PDF: 7 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190A (20 May 2016); doi: 10.1117/12.2228611
Show Author Affiliations
M. Razeghi, Northwestern Univ. (United States)
A. Haddadi, Northwestern Univ. (United States)
X. V. Suo, Northwestern Univ. (United States)
S. Adhikary, Northwestern Univ. (United States)
P. Dianat, Northwestern Univ. (United States)
R. Chevallier, Northwestern Univ. (United States)
A. M. Hoang, Northwestern Univ. (United States)
A. Dehzangi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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