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Proceedings Paper

Influence of deposition parameters on residual stress of YbF3 thin film
Author(s): Yao-ping Zhang; Jun-qi Fan; Guo-yun Long
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Paper Abstract

YbF3 was proposed as a substitute for ThF4 in anti-reflection or reflection coatings for the infrared range, and the residual stress of YbF3 thin film using APS plasma ion assisted deposition(PIAD) was studied. From the results, we found the anode voltage of PIAD has a large effect on the residual stress of YbF3 thin film, and the refractive index of YbF3 produced with PIAD was higher than without it, with a possible reason close to packing density. Finally, we produced multi-layer reflection coating on a 260mm diameter mono-crystalline silicon substrate. Its surface contour was approximately 0.240λ (λ=632.8nm), and the absorption was lower than 200ppm, which can satisfy the practical requirement.

Paper Details

Date Published: 26 January 2016
PDF: 5 pages
Proc. SPIE 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015, 97960N (26 January 2016); doi: 10.1117/12.2228239
Show Author Affiliations
Yao-ping Zhang, Institute of Optics and Electronics (China)
Key Lab. on Adaptive Optics (China)
Jun-qi Fan, Institute of Optics and Electronics (China)
Key Lab. on Adaptive Optics (China)
Guo-yun Long, Institute of Optics and Electronics (China)
Key Lab. on Adaptive Optics (China)


Published in SPIE Proceedings Vol. 9796:
Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015
Weimin Bao; Yueguang Lv, Editor(s)

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