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Proceedings Paper

Development of dual-band barrier detectors
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Paper Abstract

We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10.0 μm), and LW/LWIR (cut-off wavelengths are 9 μm and 11.0 μm) detectors with nBn and pBp designs. Recent results include a high performance bias-selectable long/long-wavelength infrared photodetector based on T2SL with a pBp barrier architecture. The two channels 50% cut-off wavelengths were ~ 9.2 μm and ~ 12 μm at 77 K. The “blue” and “red” LWIR absorbers demonstrated saturated QE values of 34 % and 28 %, respectively, measured in a backside illuminated configuration with a ~ 35 μm thick layer of residual GaSb substrate. Bulk-limited dark current levels were ~ 2.6 x 10-7 A/cm2 at + 100 mV and ~ 8.3 x 10-4 A/cm2 at - 200 mV for the “blue” and “red” channels, respectively.

Paper Details

Date Published: 20 May 2016
PDF: 6 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981911 (20 May 2016); doi: 10.1117/12.2228166
Show Author Affiliations
Elena Plis, SKINfrared LLC (United States)
Stephen A. Myers, SKINfrared LLC (United States)
David A. Ramirez, SKINfrared LLC (United States)
Sanjay Krishna, SKINfrared LLC (United States)
The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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