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Proceedings Paper

Picosecond four-wave mixing in silicon
Author(s): Peter Maly; Jaroslav Pantoflicek; A. Svoboda
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Paper Abstract

We have studied the temporal response of four-wave mixing in silicon to study the coherence of picosecond pulses and the diffusion of free carriers. The measurements were done at room temperature. The sample used was an N-type monocrystalline silicon with the impurity density of 5 1O15 cm-3.

Paper Details

Date Published: 1 July 1990
PDF: 2 pages
Proc. SPIE 1319, Optics in Complex Systems, (1 July 1990); doi: 10.1117/12.22276
Show Author Affiliations
Peter Maly, Charles Univ. (Czech Republic)
Jaroslav Pantoflicek, Charles Univ. (Czech Republic)
A. Svoboda, Charles Univ. (Czech Republic)

Published in SPIE Proceedings Vol. 1319:
Optics in Complex Systems
F. Lanzl; H.-J. Preuss; G. Weigelt, Editor(s)

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