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Proceedings Paper

(Si)GeSn nanostructures for light emitters
Author(s): D. Rainko; D. Stange; N. von den Driesch; C. Schulte-Braucks; G. Mussler; Z. Ikonic; J. M. Hartmann; M. Luysberg; S. Mantl; D. Grützmacher; D. Buca
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Paper Abstract

Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group IV photonic devices. The major goal here is the realization of fully integrated group IV room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si)Ge(Sn) heterostructures, ranging from GeSn/Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices.

Paper Details

Date Published: 13 May 2016
PDF: 9 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910W (13 May 2016); doi: 10.1117/12.2227573
Show Author Affiliations
D. Rainko, Forschungszentrum Jülich GmbH (Germany)
D. Stange, Forschungszentrum Jülich GmbH (Germany)
N. von den Driesch, Forschungszentrum Jülich GmbH (Germany)
C. Schulte-Braucks, Forschungszentrum Jülich GmbH (Germany)
G. Mussler, Forschungszentrum Jülich GmbH (Germany)
Z. Ikonic, Univ. of Leeds (United Kingdom)
J. M. Hartmann, CEA-LETI, Univ. Grenoble Alpes (France)
M. Luysberg, Forschungszentrum Jülich GmbH (Germany)
S. Mantl, Forschungszentrum Jülich GmbH (Germany)
D. Grützmacher, Forschungszentrum Jülich GmbH (Germany)
D. Buca, Forschungszentrum Jülich GmbH (Germany)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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