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Proceedings Paper

Dual state antiphase excitability in optically injected quantum dot lasers
Author(s): B. Kelleher; D. Goulding; B. Tykalewicz; N. Fedorov; I. Dubinkin; S. P. Hegarty; G. Huyet; T. Erneux; E. A. Viktorov
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Paper Abstract

Depending on device and operating parameters, the emission of lasers based on InAs quantum dot (QD) material may come from the ground state (GS) only, from the first excited state (ES) only or simultaneously from both states. When the emission is from the ES only, optical injection at the GS frequency can completely suppress the ES output and instead, phase-locked emission from the GS can be obtained. We report on a variety of non-linear phenomena obtained when the frequency of the master laser is varied revealing two antiphase, dual-state excitable regimes.

Paper Details

Date Published: 28 April 2016
PDF: 6 pages
Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98920V (28 April 2016); doi: 10.1117/12.2227537
Show Author Affiliations
B. Kelleher, Univ. College Cork (Ireland)
D. Goulding, Univ. College Cork (Ireland)
Cork Institute of Technology (Ireland)
B. Tykalewicz, Univ. College Cork (Ireland)
Cork Institute of Technology (Ireland)
N. Fedorov, ITMO Univ. (Russian Federation)
I. Dubinkin, ITMO Univ. (Russian Federation)
S. P. Hegarty, Univ. College Cork (Ireland)
Cork Institute of Technology (Ireland)
G. Huyet, Univ. College Cork (Ireland)
Cork Institute of Technology (Ireland)
ITMO Univ. (Russian Federation)
T. Erneux, Optique Nonlinéaire Théorique (Belgium)
E. A. Viktorov, ITMO Univ. (Russian Federation)
Optique Nonlinéaire Théorique (Belgium)


Published in SPIE Proceedings Vol. 9892:
Semiconductor Lasers and Laser Dynamics VII
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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