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Proceedings Paper

Hybrid silicon plasmonic-based TE-pass polarization filter for SOI platform
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Paper Abstract

In this paper, a novel design of hybrid silicon plasmonic transverse electric (TE) pass polarizer based on silicon-oninsulator (SOI) platform is reported and analyzed. The numerical results are obtained by using full vectorial finite element method. The suggested design depends on gold rods that are injected into the substrate in order to tolerate the function of the device and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -0.19 dB insertion losses with compact device length of 18 μm. Further, the introduced device is easy for fabrication and is compatible with the standard CMOS fabrication process.

Paper Details

Date Published: 13 May 2016
PDF: 6 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989124 (13 May 2016); doi: 10.1117/12.2227533
Show Author Affiliations
Shaimaa I. Azzam, Zewail City of Science and Technology (Egypt)
Mansoura Univ. (Egypt)
Mohamed Farhat O. Hameed, Zewail City of Science and Technology (Egypt)
Mansoura Univ. (Egypt)
Reham Zagloul, Zewail City of Science and Technology (Egypt)
Salah S. A. Obayya, Zewail City of Science and Technology (Egypt)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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