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Proceedings Paper

Efficient carrier transfer from graphene quantum dots to GaN epilayers
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Paper Abstract

The photoluminescence (PL) properties in GaN epilayers were investigated after depositing graphene quantum dots (GQDs) on the GaN surface. A seven-fold enhancement of the PL intensity in GaN was observed in the GQD/GaN composite. On the basis of the PL dynamics, the enhancement of PL in GaN is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer is caused by the work function difference between GQDs and GaN, evidencing by Kelvin probe measurement. The improved PL is promising toward applications in the GaN-based optoelectronic devices.

Paper Details

Date Published: 21 April 2016
PDF: 7 pages
Proc. SPIE 9884, Nanophotonics VI, 98842R (21 April 2016); doi: 10.1117/12.2227459
Show Author Affiliations
Tzu-Neng Lin, Chung Yuan Christian Univ. (Taiwan)
Svette Reina Merden Santiago, Chung Yuan Christian Univ. (Taiwan)
Chi-Tsu Yuan, Chung Yuan Christian Univ. (Taiwan)
Ji-Lin Shen, Chung Yuan Christian Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9884:
Nanophotonics VI
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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