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Proceedings Paper

Heterogeneous integration of SiGe/Ge and III-V for Si photonics
Author(s): Mitsuru Takenaka; Younghyun Kim; Jaehoon Han; Jian Kang; Yuki Ikku; Yongpeng Cheng; Jinkwon Park; Shinichi Takagi
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Paper Abstract

The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

Paper Details

Date Published: 13 May 2016
PDF: 8 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98911H (13 May 2016); doi: 10.1117/12.2227457
Show Author Affiliations
Mitsuru Takenaka, The Univ. of Tokyo (Japan)
Younghyun Kim, The Univ. of Tokyo (Japan)
Jaehoon Han, The Univ. of Tokyo (Japan)
JST-CREST (Japan)
Jian Kang, The Univ. of Tokyo (Japan)
JST-CREST (Japan)
Yuki Ikku, The Univ. of Tokyo (Japan)
Yongpeng Cheng, The Univ. of Tokyo (Japan)
Jinkwon Park, The Univ. of Tokyo (Japan)
JST-CREST (Japan)
Shinichi Takagi, The Univ. of Tokyo (Japan)
JST-CREST (Japan)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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