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Proceedings Paper

Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating-gate graphene-channel FET
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Paper Abstract

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With ultimately high-quality graphene where the electron scattering is only limited by acoustic phonons, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed 4 X 1012 s-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. We show that the giant total growth rate originates from cooperative promotion of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

Paper Details

Date Published: 29 April 2016
PDF: 7 pages
Proc. SPIE 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, 98560F (29 April 2016); doi: 10.1117/12.2227438
Show Author Affiliations
Akira Satou, Tohoku Univ. (Japan)
Yuki Koseki, Tohoku Univ. (Japan)
Takayuki Watanabe, Tohoku Univ. (Japan)
Vyacheslav V. Popov, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation)
Saratov State Univ. (Russian Federation)
Saratov Scientific Ctr. of the Russian Academy of Sciences (Russian Federation)
Victor Ryzhii, Tohoku Univ. (Japan)
Taiichi Otsuji, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 9856:
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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