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Proceedings Paper

Highly efficient silicon capacitive modulators based on a vertical oxide layer
Author(s): A. Abraham; D. Perez-Galacho; S. Olivier; D. Marris-Morini; L. Vivien
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Paper Abstract

We present two novel capacitive modulator phase shifter architectures using a vertical oxide. The first structure consists of a vertical oxide slot embedded in a silicon waveguide along the propagation direction. The second structure is based on a sub-wavelength approach, with several periodic vertical oxide layers along the propagation direction. This paper focuses on the design of the modulator devices and the simulation of their performances.

Paper Details

Date Published: 13 May 2016
PDF: 6 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989111 (13 May 2016); doi: 10.1117/12.2227433
Show Author Affiliations
A. Abraham, Univ. Grenoble Alpes, CEA-LETI (France)
Institut d’Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
D. Perez-Galacho, Institut d’Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
S. Olivier, Institut d’Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
D. Marris-Morini, Institut d’Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
L. Vivien, Institut d’Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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