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Proceedings Paper

Effects of doping on the dynamic mechanical response of semiconductor cantilevers to electrostatic forces
Author(s): Albert K. Henning
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Paper Abstract

The theory of electrostatic forces on doped semiconductor cantilevers, and their dynamic, mechanical response, is presented. Effects on constant, and time-varying, voltages between the cantilever and a mechanically fixed reference potential are studied. Surface changes are considered, since they can screen electrostatic forces significantly. The results show work function differences between the cantilever and the reference electrode must be included in calculating the mechanical response of semiconductor cantilevers to electrostatic forces. Surface charges, as long as their sheet densities are below 1011 cm-2, will not present especial difficulties for either analysis or behavior. Small-signal analysis of the mechanical response is complicated by both large-signal applied biases, giving rise to displacement currents, and penetration of the electric field into non-degenerate semiconductors.

Paper Details

Date Published: 26 September 1995
PDF: 10 pages
Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); doi: 10.1117/12.222652
Show Author Affiliations
Albert K. Henning, Dartmouth College (United States)

Published in SPIE Proceedings Vol. 2640:
Microlithography and Metrology in Micromachining
Michael T. Postek, Editor(s)

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