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Proceedings Paper

Low-temperature process for very high aspect ratio silicon microstructures using SOG etch mask
Author(s): X. Trent Huang; Liang-Yuh Chen; Noel C. MacDonald
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Paper Abstract

We present a low temperature single mask process for the fabrication of submicron very high aspect ratio silicon microstructures using a novel SOG (Spin On Glass) scheme for the RIE etch mask. SOG for the planarization of trenches in VLSI processing is extended to produce high aspect ratio oxide etch mask for the dry RIE etching of single crystal silicon. This work extends the height of silicon microstructures from what is currently achievable (10 - 20 microns) to over 50 microns, creating ultra high aspect ratio (greater than 50:1) structures.

Paper Details

Date Published: 26 September 1995
PDF: 6 pages
Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); doi: 10.1117/12.222646
Show Author Affiliations
X. Trent Huang, Cornell Univ. (United States)
Liang-Yuh Chen, Cornell Univ. (United States)
Noel C. MacDonald, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 2640:
Microlithography and Metrology in Micromachining
Michael T. Postek, Editor(s)

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