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Proceedings Paper

Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples
Author(s): Tomasz Garbowski; Friedhelm Panteleit; Gregor Dellemann; Manuela Gutsch; Christoph Hohle; Elke Reich; Matthias Rudolph; Katja Steidel; Xaver Thrun; Dirk Zeidler
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Paper Abstract

Electron optics can assist in the fabrication of semiconductor devices in many challenges that arise from the ongoing decrease of structure size. Examples are augmenting optical lithography by electron beam direct write strategies and high-throughput imaging of patterned structures with multiple beam electron microscopes. We use multiple beam electron microscopy to image semiconductor wafers processed by electron beam lithography.

Paper Details

Date Published: 8 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781V (8 March 2016); doi: 10.1117/12.2225501
Show Author Affiliations
Tomasz Garbowski, Carl Zeiss Microscopy GmbH (Germany)
Friedhelm Panteleit, Carl Zeiss Microscopy GmbH (Germany)
Gregor Dellemann, Carl Zeiss Microscopy GmbH (Germany)
Manuela Gutsch, Fraunhofer Institute of Photonic Microsystems (Germany)
Christoph Hohle, Fraunhofer Institute for Photonic Microsystems (Germany)
Elke Reich, Fraunhofer Institute of Photonic Microsystems (Germany)
Matthias Rudolph, Fraunhofer Institute of Photonic Microsystems (Germany)
Katja Steidel, Fraunhofer Institute of Photonic Microsystems (Germany)
Xaver Thrun, Fraunhofer Institute of Photonic Microsystems (Germany)
Dirk Zeidler, Carl Zeiss Microscopy GmbH (Germany)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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