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Proceedings Paper

Broadband and high-speed silicon dual-ring modulator based on p-i-n-i-p junction
Author(s): Bahawal Haq; Mahmoud Rasras
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Paper Abstract

We propose a silicon dual-ring modulator consisting of two serially cascaded rings embedded with p-i-n-i-p junctions driven by one signal, in contrast to a differential signal pair. The simulations for optimizing the design of the phase shifter and the optical response of the both rings are performed. We show that the device performs better than the single ring. The modulator has a higher optical bandwidth, 3-dB modulation bandwidth and bit rate as compared to a single ring. In contrast to a cascaded ring modulator driven by a differential signal pair, it can be driven by a single p-i-n-i-p junction and RF signal. A serially coupled ring resonator has three times the resonance linewidth as compared to a single ring. Furthermore, it can support significantly higher data rates of up to 13 GHz.

Paper Details

Date Published: 13 May 2016
PDF: 7 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989110 (13 May 2016); doi: 10.1117/12.2225162
Show Author Affiliations
Bahawal Haq, Masdar Institute of Science & Technology (United Arab Emirates)
Mahmoud Rasras, Masdar Institute of Science & Technology (United Arab Emirates)


Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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