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Proceedings Paper

High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate
Author(s): Yi Zhou; Jianxin Chen; Zhicheng Xu; Li He
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Paper Abstract

In recent years, interband cascade detectors (ICIP) based on typer-II superlattice have shown great performance potential at high operation temperature. In this paper, we report our studies on mid-infrared interband cascade photodetectors first grown on InAs substrate. We examined the photo-generated carriers’ transport in ICIP structures by comparing three detectors grown on InAs substrate. The 2-stages ICIP device has demonstrated a high quantum efficiency around 20% at room temperature. The dark current density of the 2-stages ICIP device at -0.05V is as low as 1 nA at 80K, 1 mA at 150K, which is comparable to the state of art PIN superlattice photodetectors with similar cutoff wavelength. The Johnson-noise limited D* reaches 1.64×1014cm.Hz1/2/W at 3.65 μm and 80K, and 4.1×1010cm.Hz1/2/W at 3.8 μm and 200K. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.

Paper Details

Date Published: 20 May 2016
PDF: 6 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191J (20 May 2016); doi: 10.1117/12.2225131
Show Author Affiliations
Yi Zhou, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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